GaAs nano-ridge laser diodes fully fabricated in a 300-mm CMOS pilot line

by | Jan 1, 2025 | Uncategorized | 0 comments

Nature, Published online: 01 January 2025; doi:10.1038/s41586-024-08364-2

A new integration approach, nano-ridge engineering, enables electrically driven GaAs-based laser diodes to be fabricated on Si wafers in a complementary metal–oxide–semiconductor (CMOS) pilot line, showing potential for the integration of laser diodes in a Si photonics platform.

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